A 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applications

dc.contributor國立臺灣師範大學應用電子科技學系zh_tw
dc.contributor.authorJeng-Han Tsaien_US
dc.contributor.authorYi-Jhang Linen_US
dc.contributor.authorHao-Chun Yuen_US
dc.date.accessioned2014-10-30T09:28:43Z
dc.date.available2014-10-30T09:28:43Z
dc.date.issued2012-01-01zh_TW
dc.description.abstractIn this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-lm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance. VC 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:145–147, 2012; View this article online at wileyonlinelibrary.comen_US
dc.description.urihttp://onlinelibrary.wiley.com/doi/10.1002/mop.26463/pdfzh_TW
dc.identifierntnulib_tp_E0611_01_002zh_TW
dc.identifier.issn0895-2477zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32238
dc.languageenzh_TW
dc.publisherWiley-Blackwellen_US
dc.relationMicrowave and Optical Technology Letters, 54(1), 145-147.en_US
dc.subject.otherCMOSen_US
dc.subject.otherRF frontendsen_US
dc.subject.otherlow noise amplifieren_US
dc.subject.otherlow-voltageen_US
dc.subject.otherlow-poweren_US
dc.titleA 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applicationsen_US

Files

Collections