A 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applications
dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
dc.contributor.author | Jeng-Han Tsai | en_US |
dc.contributor.author | Yi-Jhang Lin | en_US |
dc.contributor.author | Hao-Chun Yu | en_US |
dc.date.accessioned | 2014-10-30T09:28:43Z | |
dc.date.available | 2014-10-30T09:28:43Z | |
dc.date.issued | 2012-01-01 | zh_TW |
dc.description.abstract | In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-lm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance. VC 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:145–147, 2012; View this article online at wileyonlinelibrary.com | en_US |
dc.description.uri | http://onlinelibrary.wiley.com/doi/10.1002/mop.26463/pdf | zh_TW |
dc.identifier | ntnulib_tp_E0611_01_002 | zh_TW |
dc.identifier.issn | 0895-2477 | zh_TW |
dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32238 | |
dc.language | en | zh_TW |
dc.publisher | Wiley-Blackwell | en_US |
dc.relation | Microwave and Optical Technology Letters, 54(1), 145-147. | en_US |
dc.subject.other | CMOS | en_US |
dc.subject.other | RF frontends | en_US |
dc.subject.other | low noise amplifier | en_US |
dc.subject.other | low-voltage | en_US |
dc.subject.other | low-power | en_US |
dc.title | A 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applications | en_US |