A 0.6 V low-power 3.5 GHz CMOS low noise amplifier for WiMAX applications
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Date
2012-01-01
Authors
Jeng-Han Tsai
Yi-Jhang Lin
Hao-Chun Yu
Journal Title
Journal ISSN
Volume Title
Publisher
Wiley-Blackwell
Abstract
In this letter, a low-voltage and low-power 3.5-GHz low
noise amplifier (LNA) is designed and fabricated using TSMC 0.18-lm
MS/RF complementary metal-oxide-semiconductor field effect transistor
(CMOS) technology. The complementary current-reused topology is
utilized to achieve low dc power consumption while maintaining
reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V
supply, the LNA achieves a small signal gain of 16.09 dB and a noise
figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA,
the MMIC has excellent FOM performance. VC 2011 Wiley Periodicals,
Inc. Microwave Opt Technol Lett 54:145–147, 2012; View this article
online at wileyonlinelibrary.com