薄膜電晶體於低溫的量子現象

Abstract

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This experiment focuses on the competition of weak localization (WL) and weak antilocalization (WAL) on a single gate and dual gate a-IGZO, these quantum interference effects on systems have been studied on a dual gate a-IGZO by varying the gate voltages (top gate and bottom gate), on the other hand, temperature and gate voltage were varied on a single gate a-IGZO to observe the competition between WL and WAL. The universal dependence of conductivity was partially unveiled onsingle gate a-IGZO and the full profile of this intriguing universal dependence was shown on the dual gate a-IGZO. It is speculated that the prefactor for WL (α0) and prefactor for WAL (α1) are determined by the ratio of the gap opening at the Dirac point to the fermi energy level, which can be manipulated via electric gating. This work hopes to help build a theoretical model and attract theoretical contributions that should be a great advantage in future applications in nanoelectronics and spintronics.