整合式多功無機鈣鈦礦發光電化學元件與電阻式記憶體製作與應用

Abstract

全無機鈣鈦礦材料因其卓越的功能性和穩定性而被認為是各種電子應用的優異半導體材料。本論文使用全無機鈣鈦礦量子點 (CsPbBr3) 並選用四層簡易的結構 (Ag/Poly(methyl methacrylate) /CsPbBr3/indium tin oxide) 來達到同時具備發光電化學元件 (Light-emitting electrochemical cell, LEC) 元件發光特性與電阻式記憶體 (Resistive random access memory, RRAM) 記憶特性的新元件。當 Ag 電極上施加負偏壓時，會以 LEC 發光特性作用；若在 Ag 電極上施加正偏壓時，則會以 RRAM 電阻轉換特性作用。 接著對此元件以氧化銦錫做兩個串連，整合出兩個視為一組的新元件，當施加正偏壓時，一側做記憶體寫入另一側做二極體發光；若施加負偏壓時，兩個元件作交換原本做記憶體寫入的元件轉成二極體發光，二極體發光轉成記憶體寫入，來達到比原本傳統電阻式記憶體以電流判讀多一種發光特性去判讀記憶體的方式。最後分析串連後元件的傳導機制與能階示意圖。All-inorganic perovskite materials are considered to be excellent semiconductor materials for various electronic applications due to their excellent functionality and stability. This paper uses all-inorganic perovskite quantum dots (CsPbBr3) and selects a four-layer simple structure (Ag/Poly(methyl methacrylate) /CsPbBr3/indium tin oxide) to achieve both the luminescence characteristics of the Light-emitting electrochemical cell (LEC) and the resistive random access memory (RRAM) is a new component with memory characteristics. When a negative bias is applied to the Ag electrode, it will act as the LEC light-emitting characteristic; if a positive bias is applied to the Ag electrode, it will act as the RRAM resistance conversion characteristic. Then use indium tin oxide to make two series connections for this device to integrate two new devices as a group. When a positive bias is applied, one side is used for memory writing and the other side is used for diode light emission; When a negative bias is applied, the two elements are exchanged. The element originally used for memory writing turns into a diode to emit light, and the diode emits light to turn into memory for writing, which is more current than the original traditional resistive memory. A way of luminous characteristics to judge memory. Finally, the conduction mechanism and energy level diagrams of the connected devices are analyzed.