MMICs in the millimeter-wave regime

dc.contributor 國立臺灣師範大學應用電子科技學系 zh_tw Huei Wang en_US Kun-You Lin en_US Zuo-Min Tsai en_US Liang-Hung Lu en_US Hsin-Chia Lu en_US Chi-Hsueh Wang en_US Jeng-Han Tsai en_US Tian-Wei Huang en_US Yi-Cheng Lin en_US 2014-10-30T09:28:44Z 2014-10-30T09:28:44Z 2009-02-01 zh_TW
dc.description.abstract On the basis of the current status of silicon based MMICs, it is possible to implement millimeter-wave SOC in silicon-based technologies that include the antenna, a medium-power amplifier, a transceiver, an LO (frequency synthesizer), and baseband circuits in a single chip. With certain interconnection schemes, such as flip-chip, to connect the chip to the substrate, it is also possible to integrate the best possible chips for a millimeter-wave communication system. Currently, CMOS is the best choice for the baseband circuits, while GaAs and InP MMICs can provide the best noise/power performance in the transceiver. High-efficiency antennas can be implemented directly on the packaging substrate. The SIP approach has the optimal combinations of the components for the best performance in a particular system. For example, a system in a package including CMOS baseband circuits, GaAs/InP-based transceiver, high-efficiency antenna, and high-power amplifier can achieve the best system characteristics. As we have discussed, the scope of SOC can be expanded along with more advanced MMIC fabrication technology and design techniques. en_US
dc.description.uri zh_TW
dc.identifier ntnulib_tp_E0611_01_012 zh_TW
dc.identifier.issn 1527-3342� zh_TW
dc.language en zh_TW
dc.publisher IEEE Microwave Theory and Techniques Society en_US
dc.relation IEEE Microwave Magazine, 10(1), 99-117. en_US
dc.title MMICs in the millimeter-wave regime en_US