MMICs in the millimeter-wave regime
No Thumbnail Available
Date
2009-02-01
Authors
Huei Wang
Kun-You Lin
Zuo-Min Tsai
Liang-Hung Lu
Hsin-Chia Lu
Chi-Hsueh Wang
Jeng-Han Tsai
Tian-Wei Huang
Yi-Cheng Lin
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE Microwave Theory and Techniques Society
Abstract
On the basis of the current status of silicon based MMICs, it is possible to implement millimeter-wave SOC in silicon-based technologies that include the antenna, a medium-power amplifier, a transceiver, an LO (frequency synthesizer), and baseband circuits in a single chip. With certain interconnection schemes, such as flip-chip, to connect the chip to the substrate, it is also possible to integrate the best possible chips for a millimeter-wave communication system. Currently, CMOS is the best choice for the baseband circuits, while GaAs and InP MMICs can provide the best noise/power performance in the transceiver. High-efficiency antennas can be implemented directly on the packaging substrate. The SIP approach has the optimal combinations of the components for the best performance in a particular system. For example, a system in a package including CMOS baseband circuits, GaAs/InP-based transceiver, high-efficiency antenna, and high-power amplifier can achieve the best system characteristics. As we have discussed, the scope of SOC can be expanded along with more advanced MMIC fabrication technology and design techniques.