雷射照射下石墨烯/二硫化鉬與六方氮化硼/二硫化鉬雙層異質結構之穩定性
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2023
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Abstract
本研究使用拉曼光譜及螢光光譜，研究了二硫化鉬和石墨烯/二硫化鉬和六方氮化硼/二硫化鉬等結構在不同雷射功率下的穩定性。結果顯示，在石墨烯/二硫化鉬和六方氮化硼/二硫化鉬等異質結構中，薄膜能夠隔絕大氣並增強二硫化鉬受雷射影響的穩定性。原子力顯微鏡表面形貌和拉曼光譜顯示，經過56 mW、30 mW雷射照射裸露的二硫化鉬後，二硫化鉬會凸起並發生結構變化，並且拉曼訊號在30分鐘後衰減至原本的10 %。結構變化的過程中，A1g和E2g兩個特徵峰會發生紅移，A1g的紅移是由氧化產生的p-dope所引起，而E2g則是由結構變化產生的應變所導致。對於石墨烯/二硫化鉬系統，我們觀察到不同的光譜特徵。在雷射照射過程中，拉曼特徵峰和光致螢光強度並沒有快速下降，這顯示結構變化現象被抑制。而對於六方氮化硼/二硫化鉬30 mW的實驗組中，觀察到拉曼特徵峰和光致螢光強度呈現先上升的趨勢，因此推測在略低於30 mW雷射的環境下，六方氮化硼/二硫化鉬能夠保持穩定。結果顯示石墨烯/二硫化鉬受雷射照射影響的穩定性最佳，六方氮化硼/二硫化鉬次之，未經覆蓋而裸露的二硫化鉬穩定性最差。
The measurement of molybdenum disulfide (MoS2) is hindered by the inability to use excessively strong lasers, resulting in a low signal-to-noise ratio. Therefore, in this study, we use Raman spectroscopy and photoluminescence spectroscopy to research the stability of MoS2 and its heterostructures with graphene/molybdenum disulfide (Gr/MoS2) and hexagonal boron nitride/molybdenum disulfide (h-BN/MoS2) under different laser powers. The results reveal that in heterostructures such as Gr/MoS2 and h-BN/MoS2, thin films can isolate the atmosphere and enhance stability.Atomic force microscopy surface morphology and Raman spectroscopy demonstrate that after irradiation with a 56 mW laser for 30 minutes, MoS2 exhibits protrusions and structural degradation, with the Raman signal attenuating to 10 % of its original intensity. During the process of structural degradation, the A1g and E2g characteristic peaks exhibit a red shift, attributed to doping and strain.In the Gr/MoS2 system, we observe distinct spectral features. During laser irradiation, the Raman fingerprint peaks and photoluminescence intensity do not exhibit rapid decay, indicating the suppression of structural degradation.In the case of the h-BN/MoS2 30 mW experimental group, we observe an initial upward trend in the Raman fingerprint peaks and photoluminescence intensity, suggesting that h-BN/MoS2 can maintain stability in an environment slightly below 30 mW of laser power.The results indicate that stability is highest in the Gr/MoS2 system, followed by the h-BN/MoS2 system, while untreated MoS2 exhibits the poorest stability.
The measurement of molybdenum disulfide (MoS2) is hindered by the inability to use excessively strong lasers, resulting in a low signal-to-noise ratio. Therefore, in this study, we use Raman spectroscopy and photoluminescence spectroscopy to research the stability of MoS2 and its heterostructures with graphene/molybdenum disulfide (Gr/MoS2) and hexagonal boron nitride/molybdenum disulfide (h-BN/MoS2) under different laser powers. The results reveal that in heterostructures such as Gr/MoS2 and h-BN/MoS2, thin films can isolate the atmosphere and enhance stability.Atomic force microscopy surface morphology and Raman spectroscopy demonstrate that after irradiation with a 56 mW laser for 30 minutes, MoS2 exhibits protrusions and structural degradation, with the Raman signal attenuating to 10 % of its original intensity. During the process of structural degradation, the A1g and E2g characteristic peaks exhibit a red shift, attributed to doping and strain.In the Gr/MoS2 system, we observe distinct spectral features. During laser irradiation, the Raman fingerprint peaks and photoluminescence intensity do not exhibit rapid decay, indicating the suppression of structural degradation.In the case of the h-BN/MoS2 30 mW experimental group, we observe an initial upward trend in the Raman fingerprint peaks and photoluminescence intensity, suggesting that h-BN/MoS2 can maintain stability in an environment slightly below 30 mW of laser power.The results indicate that stability is highest in the Gr/MoS2 system, followed by the h-BN/MoS2 system, while untreated MoS2 exhibits the poorest stability.
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二維材料, 二硫化鉬, 石墨烯, 六方氮化硼, 光致螢光, 拉曼光譜, 2D material, MoS2, Graphene, h-BN, Photoluminescence, Raman