Microstructuring characteristics of a chemically amplified photoresist synthesized for ultra-thick UV-LIGA applications

dc.contributor國立臺灣師範大學機電工程學系zh_tw
dc.contributor.authorYang, Chii-Rongen_US
dc.contributor.authorHsieh, Gen-Wenen_US
dc.contributor.authorHsieh, Yu-Shengen_US
dc.contributor.authorLee, Yu-Deren_US
dc.date.accessioned2014-10-30T09:36:16Z
dc.date.available2014-10-30T09:36:16Z
dc.date.issued2004-01-09zh_TW
dc.description.abstractThe thick-film photoresists are essential to fabricate high-aspect-ratio microstructures by the UV-LIGA process. However, current thick-film photoresists have some weaknesses including a thickness of only up to 100 µm, a poor line-width resolution and difficulty in being stripped. Consequently, a new type of thick-film photoresist is required. This work presents a novel positive-tone MMA/TBMA photoresist, formed by combining copolymerization and chemically amplification (CA) for use in the ultra-thick UV-LIGA process. An MMA/TBMA photoresist film with a thickness of 500 µm is easily achieved. For MMA/TBMA photoresist layers with thicknesses from 100 µm to 500 µm, an exposure dose from 80 to 100 mJ cm−2 per micron is required to remove all of the exposed photoresist, revealing that the selectivity between radiated and non-radiated zones during a long development process is sufficiently high; the sidewall verticality and aspect ratio of the microstructure are excellent; stress-induced cracks are not observed in the non-radiated zones after development. MMA/TBMA photoresist is demonstrated to fabricate open microstructures with aspect ratios of at least 10 and close microstructures with aspect ratios of not more than 10, such values of aspect ratio are still sufficient for most ultra-thick mold applications. Moreover, MMA/TBMA photoresist can undergo erosion by acidic electrolyte and easily be stripped using usual organic solvents. These findings demonstrate that MMA/TBMA photoresist has the potential to replace SU-8 resist in the ultra-thick UV-LIGA process.en_US
dc.description.urihttp://iopscience.iop.org/0960-1317/14/8/002/pdf/0960-1317_14_8_002.pdfzh_TW
dc.identifierntnulib_tp_E0403_01_010zh_TW
dc.identifier.issn0960-1317zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/36953
dc.languageenzh_TW
dc.publisherIOPen_US
dc.relationJournal of Micromechanics and Microengineering, 14(8), 1126-1134.en_US
dc.relation.urihttp://dx.doi.org/10.1088/0960-1317/14/8/002zh_TW
dc.titleMicrostructuring characteristics of a chemically amplified photoresist synthesized for ultra-thick UV-LIGA applicationsen_US

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