光熱作用下相變化薄膜奈米結構之原子力顯微量測研究

Abstract

本論文是使用原子力顯微術( Atomic Force Microscopy )，針對熱微影術( Thermal- lithography )以及動態測試儀( Dynamic Optical Disk Tester )於鍺銻碲( Ge2Sb2Te5 )相變化薄膜上製作之奈米結構作表面形貌量測研究。 首先討論在改變相變化薄膜厚度情況下，使用熱微影術製作單線 結構所產生的影響；透過光學影像與使用原子力顯微術所獲得的表面形貌做比較，我們可以進一步瞭解雷射光束作用於相變化薄膜上的物理特性。 接著利用動態測試儀寫下重覆作用之記錄點，產生弧形「︵」結構；藉由寫入策略的調變來控制此重複性結構出現的頻率。一樣的，透過原子力顯微術來獲取表面形貌，進一步統計出此結構產生的週期；並且嘗試改變雷射的寫入功率，觀察此結構表面形貌的變化。 最後我們量測獲得寫下的線結構最細線寬為144nm，以及弧形「︵」結構最小的週期為141nm。

In this study, we use Atomic Force Microscopy to measure the surface topography of nano structure made by Thermal-lithography and dynamic optical disk tester on phase-change material Ge2Sb2Te5 thin film. First, we use Thermal-lithography to make a single line structure on different thickness of phase change thin film. We compare the CCD images and surface topography images to know more about the physical properties of laser interaction on phase change thin film. Then we write over recording marks by Dynamic Optical Disk Tester and it becomes a segmental structure. We can control this repetitive segmental structure by changing writing strategy. As the same, we get the surface topography by atomic force microscopy and count the periods of these structures with different laser writing power. Finally, we measure the smallest line width of single line width is 144nm and the periods of the segmental structure are 141nm.