Characteristics of In-Ge-Sb-Sn-Te Thin Film Used for Phase Change Optical Recording Media
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Date
2011-02-01
Authors
Ou, Sin-Liang
Cheng, Chin-Pao
Yeh, Chin-Yen
Chung, Chung-Jen
Kao, Kuo-Sheng
Lin, Re-Ching
Journal Title
Journal ISSN
Volume Title
Publisher
Trans Tech Publications
Abstract
The In10GexSb52-xSn23Te15 films (x = 2, 5, and 9) were deposited on nature oxidized silicon wafer and glass substrate by dc magnetron sputtering. The ZnS-SiO2 films were used as protective layers. The thickness of the In10GexSb52-xSn23Te15 film is 20 nm. We have studied the crystallization kinetics, structural and optical properties of the In10GexSb52-xSn23Te15 (x = 2, 5, and 9) recording films. It is found that the crystallization temperature of the film is increased with increasing Ge content. The optical contrasts of In10GexSb52-xSn23Te15 films with x = 2~9 are all higher than 30 % at a wavelength of 405 nm, showing that the films are suitable for blue laser optical recording media application.