矽奈米柱陣列太陽能電池

Abstract

本研究乃著重於研發p-i-n矽奈米柱陣列結構太陽能電池，其具高光電轉換效率與抗反射之優勢。研究內容為利用半導體製程技術，製作多種型式奈米柱排列結構，利用手指狀電極與背電極方式將載子收集，並進行元件光電轉換效率與外部量子效應探討，其後更使用蒸鍍技術沉積透明導電層（ITO）於正面，目的為減少載子傳輸路徑提升收集率。 本研究p-i-n結構矽奈米柱採用矩陣或錯位排列方式，皆可得到光電轉換效率10%以上之成果，其反射率遠低於平面結構之太陽能電池，具極佳抗反射特性，且沉積ITO薄膜後，最高可提升18.24%之光電流值。

In this study, solar cells consisting of ordered p-i-n junction silicon nanorod matrix array with different lengths, diameters and period were fabricated. The advantages of p-i-n nanorod structures were low reflection and high surface to volume ratio compared to planar silicon thin films. Moreover, we designed hexagonal arrays to get sufficiently dense array to gain more number of p-i-n junction. The direct electrical pathways provided by the nanorod ensure the rapid collection of carriers generated throughout the device limited primarily by the surface area of the nanrods array. And devices deposit the ITO film would supply a shorter carrier diffusion length to enhance the photocurrent. Finally, we present that the p-i-n nanorod of matrix and hexagonal array structure solar cell actually improve the power conversion efficiency up to 10%, and had an excellent antireflection performance of optical. After depositing the ITO film, it enhances the nanorod devices photocurrent value 18.24% (the highest).