新型三維微探針陣列製作技術開發

dc.contributor國立臺灣師範大學機電工程學系zh_tw
dc.contributor.author楊啟榮zh_tw
dc.contributor.author曾柏翔zh_tw
dc.contributor.author賴昶均zh_tw
dc.contributor.author羅嘉佑zh_tw
dc.date.accessioned2014-10-30T09:36:21Z
dc.date.available2014-10-30T09:36:21Z
dc.date.issued2007-11-23zh_TW
dc.description.abstract本研究提出一種新型微探針陣列製造技術,利用微機電製程特有之矽基體型微加工技術、KMPR厚膜光阻微影、精密電鑄製程,並結合PDMS聚合物材料之選用,於可撓曲基板上製造出三維微探針陣列。於實驗中,建立新型厚膜光阻KMPR 1050之相關製程參數,使得以一次旋轉塗佈的製程,便可得到厚度約130.mu.m之光阻膜。配合KOH蝕刻、精密電鑄製程與本實驗所提出之二階段式光阻去除步驟,可於撓曲基材上製作出高度約170.mu.m、寬為50.mu.m,深寬比達3.4,且具出平面特性之微探針陣列。zh_tw
dc.description.abstractThe research has developed a novel method of microneedle array through the combination of integrating silicon bulk micromachining, thick photoresist KMPR1050, electroforming and polymer material PDMS.The microneedle array was successful fabricated on a flexible PDMS substrate. This study complete establish experimental parameters of KMPR, and can produce thickness of 130.mu.m KMPR by single spin. Combination of 130.mu.m KMPR, KOH etching, electroforming, two-step removing KMPR, the length of the microneedle array is 170.mu.m and width is 50.mu.m (aspect ratio, 3.5) which is out of plane was successful fabricated on a flexible PDMS substrate.en_US
dc.identifierntnulib_tp_E0403_02_050zh_TW
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/37013
dc.languagechizh_TW
dc.relation2007中國機械工程學會(CSME)第24屆全國學術研討會論文集,5008-5013。zh_tw
dc.subject.other三維微探針陣列zh_tw
dc.subject.otherKMPR厚膜光阻zh_tw
dc.subject.other精密電鑄zh_tw
dc.subject.other3D microneedle arrayen_US
dc.subject.otherKMPR 1050en_US
dc.subject.otherElectroformingen_US
dc.title新型三維微探針陣列製作技術開發zh_tw
dc.titleA Novel Manufacturing Technique of 3D Microneedle Arrayen_US

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