K頻帶互補式金氧半功率放大器設計 Design of K-band CMOS Power Amplifiers

dc.contributor 蔡政翰 zh_TW
dc.contributor Tsai, Jeng-Han en_US
dc.contributor.author 劉家凱 zh_TW
dc.contributor.author Liu, Chia-Kai en_US
dc.date.accessioned 2019-09-03T10:45:30Z
dc.date.available 2019-07-31
dc.date.available 2019-09-03T10:45:30Z
dc.date.issued 2015
dc.description.abstract 第一個電路為變壓器功率結合技術之K頻帶功率放大器,採用半圈變壓器 (Half-turn Transformer)實現功率結合與阻抗轉換以達到節省面積,量測結果在23.5 GHz時,增益為12 dB,飽和輸出功率(P_sat)為22.5 dBm,1dB增益壓縮輸出功率(OP_1dB)為18.1 dBm,最高功率輔助效率(PAE)為21.8%,晶片佈局面積為0.29 mm^2。 第二個電路為變壓器電流結合技術之K頻帶功率放大器,延續第一個設計之功率放大器,運用變壓器電流結合技術(Current Combining Transformer)來提升輸出功率,將功率放大單元直接並聯在進行匹配,而為了要提高增益,採用兩級功率放大器進行設計,量測結果在23 GHz時,增益為19.5 dB,飽和輸出功率(P_sat)為24.9 dBm,1 dB增益壓縮輸出功率(OP_1dB)為20.6 dBm,最高功率輔助效率(PAE)為17.0%,晶片佈局面積為0.97 mm^2。 zh_TW
dc.description.abstract The first circuit is K-band power amplifier with transformer combining technique which uses half-turn transformer to implement power combining and impedance transformations, and to reduce size of chip. The PA achieves measured small-signal gain ("S" _"21" ) of 12 dB and maximum saturation output power ("P" _"sat" ) of 22.5 dBm, the measured output 1-dB compression point (〖"OP" 〗_"1dB" ) of 18.1 dBm and peak power-added efficiency (PAE) is 21.8 % at 23.5 GHz. The chip area is 0.29 mm^2. Recall that in first design, the second circuit is power amplifier using current combining transformer technique to increase output power. In order to reach higher gain, this thesis use 2-stage power amplifier design. The PA achieves measured "S" _"21" of 19.5 dB and "P" _"sat" of 24.9 dBm, the 〖"OP" 〗_"1dB" of 20.6 dBm and PAE of 17 % at 23 GHz. The chip area including is 0.97 mm^2. en_US
dc.description.sponsorship 電機工程學系 zh_TW
dc.identifier G060275027H
dc.identifier.uri http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060275027H%22.&%22.id.&
dc.identifier.uri http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/95630
dc.language 中文
dc.subject K頻段 zh_TW
dc.subject 功率放大器 zh_TW
dc.subject 變壓器 zh_TW
dc.subject 互補式金屬氧化半導體 zh_TW
dc.subject 功率合成技術 zh_TW
dc.subject K-band en_US
dc.subject power amplifier en_US
dc.subject transformer en_US
dc.subject CMOS en_US
dc.subject power combining techniques en_US
dc.title K頻帶互補式金氧半功率放大器設計 zh_TW
dc.title Design of K-band CMOS Power Amplifiers en_US
Files
Original bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
060275027h01.pdf
Size:
4.52 MB
Format:
Adobe Portable Document Format
Description:
Collections