矽在銀/矽(111)-(√3x√3)與銀/鍺(111)-(√3x√3)表面上的成長 The growth of silicon on Ag/Si(111)-(√3x√3) and Ag/Ge(111)-(√3x√3) surfaces

Date
2014
Authors
謝伯宜
Hsieh, Po-I
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Abstract
本實驗將矽原子蒸鍍於不同表面溫度之銀/矽(111)-(√3x√3)與銀/鍺(111)-(√3x√3)表面,並以掃描穿隧式顯微鏡(STM)觀察矽原子於兩表面的成長。在矽/銀/矽系統中,√3x√3島緣之下層發生了矽-銀交換的現象,矽原子將以Step-growth的形式自√3x√3島緣併入基底,使得上層√3x√3島面積比例上升。在矽/銀/鍺系統中,在表面上可觀察到兩種規則性結構,分別為 √3x√3島以及有序結構。√3x√3島為矽原子與下方銀原子層交換所形成之週期性島,有序結構為矽原子於表面上排列組成之單層矽結構。該有序結構依原子排列方式,可進一步區分為2x2六角結構以及矩形結構。
In this experiment, we deposited Si atoms on Ag/Si(111)-(√3x√3) and Ag/Ge(111)-(√3x√3) surfaces at different surface temperature and observed the growth of Si atoms on surfaces by Scanning Tunneling Microscope (STM). In Si/Ag/Si system, there are Si-Ag exchange at lower layer of √3x√3 island edges. Si atoms will join into substrate at island edges with step-growth mode. It let the area ratio of upper √3x√3 islands increase. In Si/Ag/Ge system, there are two kinds of regular structures, √3x√3 island and order structure, on surfaces. √3x√3 islands are regular structures which are formed by the exchange between Si atoms and under Ag layers. Order structures are single layer of Si atoms. It can be divided into 2x2 hexagonal structure and rectangular structure by different arrangements of atoms.
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掃描穿隧式顯微鏡, 矽烯, , , STM, Silicene, Silicon, Germanium
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