單晶及異質接面太陽能電池試製與模擬

Abstract

本論文中，藉由本實驗的電子束蒸鍍機製作HIT太陽能電池經過退火製程後獲得了開路電壓320 mV和短路電流2.21 mA/cm2。，但此設備具有電漿損傷和成本昂貴的缺點。，跟電子束蒸鍍相較之下不會有電漿損傷的顧慮且設備便宜許多，對未來要以製程設備降低成本方向來看電子束蒸鍍機是個不錯的選擇。 此外，本實驗室利用Silvaco TCAD模擬建立HIT(hetrojunction with intrinsic thin layer)太陽能電池模組，加入一基極偏壓發現可以大幅增加開路電壓外，短路電流也會增加，隨著基極偏壓的加大，效率也大幅的增加，由效率19.7%增至31.2%，總共增加了50.8%，開路電壓也從690mV曾至890mV，總共增加了29%是個不錯的發現，接著再將厚度減薄，發現電流密度有些微的下降趨勢，從能帶圖、電子電洞濃度都有下降的趨勢，在未來實際用在真實元件透過分析，將材料參數帶入模擬更能確定模擬結構的正確性及可套用到實際應用中。

In this work, the experimental used the electron beam evaporator making HIT solar cell production process after annealing were obtained open circuit voltage 320 mV and short circuit current of 2.21 mA/cm2. However, this device has plasma damage and costly drawbacks. , Compared with the electron beam evaporation there will be no injury concerns and plasma equipment much cheaper, in the future to reduce the cost of process equipment to the direction of view electron beam evaporator is a good choice. In addition, the laboratory used of Silvaco TCAD simulation to establish HIT (Hetrojunction with Intrinsic Thin layer) solar modules. Adding a base bias can increased open circuit voltage and short circuit current. The efficiency increase 11.5%, open circuit voltage increase 50.8%. An open circuit voltage from 690mV to 890mV enhancement 29% .When followed thickness thinning found that the current density is slightly downward trend, from the energy band diagram, electron and hole concentrations have a downward trend in the future through actual use in the real component analysis. The material parameters into the simulation to better determine the accuracy and can simulate the structure applied to practical applications.