氧化鈥鋅/氧化鋅雙層膜結構之物性研究

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dc.contributor駱芳鈺zh_TW
dc.contributorFang-Yuh Loen_US
dc.contributor.author莊桓嘉zh_TW
dc.contributor.authorChuang Huan-Chiaen_US
dc.date.accessioned2019-09-05T02:12:01Z
dc.date.available2014-7-24
dc.date.available2019-09-05T02:12:01Z
dc.date.issued2014
dc.description.abstract本論文以脈衝雷射蒸鍍法於c平面藍寶石基板上先沉積一層氧化鋅緩衝層，再鍍上一層氧化鈥鋅薄膜，探討緩衝層在不同溫度、厚度下對氧化鈥鋅薄膜的影響。 以X光繞射檢測結果顯示我們的氧化鈥鋅薄膜為c軸取向，沒有發現任何其他結晶相。且在參雜高濃度鈥元素時引入氧化鋅緩衝層有助於氧化鈥鋅薄膜品質的提升。以PL檢測結果主要的缺陷發光有鋅空缺和鋅間隙，且隨著樣品檢測溫度的降低薄膜發光有增強的趨勢。SQUID檢測結果顯示氧化鈥鋅薄膜在室溫和T=5K時皆為順磁性。zh_TW
dc.description.abstractPulsed-laser deposition (PLD) was applied to grow holmium-doped ZnO(Ho:ZnO) thin films on c-sapphire substrate with different holmium(Ho) concentrations and with ZnO buffer layer. The nominal doping density of Ho ranges from 3％－15％. The physical properties of Ho:ZnO thin films were investigatedby x-ray diffraction (XRD), photoluminescence(PL), and superconducting quantum interference device (SQUID). The XRD patterns show that there is no secondary phase. Photoluminesence spectroscopy showed the major defects are zinc vacancy and interstitial zinc. The m-H curves show paramagnetism of the thin films.en_US
dc.description.sponsorship物理學系zh_TW
dc.identifierGN060041005S
dc.identifier.urihttp://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22GN060041005S%22.&%22.id.&
dc.identifier.urihttp://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/102552
dc.language中文
dc.subject脈衝雷射蒸鍍法zh_TW
dc.subject稀磁性半導體zh_TW
dc.subject鈥zh_TW
dc.subject順磁性zh_TW
dc.subjectpulsed-laser depositionen_US
dc.subjectdiluted magnetic semiconductoren_US
dc.subjectHoen_US
dc.subjectparamagnetismen_US
dc.title氧化鈥鋅/氧化鋅雙層膜結構之物性研究zh_TW
dc.titleStudy of physical properties of zinc holmium oxide / zinc oxide bilayer structuresen_US

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