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Title: A 86- to 108-GHz Amplifier in 90-nm CMOS
Authors: 國立臺灣師範大學應用電子科技學系
Yu-Sian Jiang
Zuo-Min Tsai
Jeng-Han Tsai
Hsien-Te Chen
Huei Wang
Issue Date: 1-Feb-2008
Publisher: IEEE Microwave Theory and Techniques Society
Abstract: This letter presents a CMOS amplifier with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The amplifier is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS configuration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS amplifier reported to date.
ISSN: 1531-1309
Other Identifiers: ntnulib_tp_E0611_01_017
Appears in Collections:教師著作

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