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Title: A W-band medium power amplifier in 90 nm CMOS
Authors: 國立臺灣師範大學應用電子科技學系
Yu-Sian Jiang
Jeng-Han Tsai
Huei Wang
Issue Date: 1-Dec-2008
Publisher: IEEE Microwave Theory and Techniques Society
Abstract: A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P sat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.
ISSN: 1531-1309�
Other Identifiers: ntnulib_tp_E0611_01_014
Appears in Collections:教師著作

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