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Integration of multifunction all inorganic perovskite-based Light emitting electrochemical cells(LEC) and Resistive random access memory (RRAM) for the production and application
Resistive random access memory
Light-emitting electrochemical cell
|Abstract:||全無機鈣鈦礦材料因其卓越的功能性和穩定性而被認為是各種電子應用的優異半導體材料。本論文使用全無機鈣鈦礦量子點 (CsPbBr3) 並選用四層簡易的結構 (Ag/Poly(methyl methacrylate) /CsPbBr3/indium tin oxide) 來達到同時具備發光電化學元件 (Light-emitting electrochemical cell, LEC) 元件發光特性與電阻式記憶體 (Resistive random access memory, RRAM) 記憶特性的新元件。當 Ag 電極上施加負偏壓時，會以 LEC 發光特性作用；若在 Ag 電極上施加正偏壓時，則會以 RRAM 電阻轉換特性作用。
All-inorganic perovskite materials are considered to be excellent semiconductor materials for various electronic applications due to their excellent functionality and stability. This paper uses all-inorganic perovskite quantum dots (CsPbBr3) and selects a four-layer simple structure (Ag/Poly(methyl methacrylate) /CsPbBr3/indium tin oxide) to achieve both the luminescence characteristics of the Light-emitting electrochemical cell (LEC) and the resistive random access memory (RRAM) is a new component with memory characteristics. When a negative bias is applied to the Ag electrode, it will act as the LEC light-emitting characteristic; if a positive bias is applied to the Ag electrode, it will act as the RRAM resistance conversion characteristic. Then use indium tin oxide to make two series connections for this device to integrate two new devices as a group. When a positive bias is applied, one side is used for memory writing and the other side is used for diode light emission; When a negative bias is applied, the two elements are exchanged. The element originally used for memory writing turns into a diode to emit light, and the diode emits light to turn into memory for writing, which is more current than the original traditional resistive memory. A way of luminous characteristics to judge memory. Finally, the conduction mechanism and energy level diagrams of the connected devices are analyzed.
|Appears in Collections:||學位論文|
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