脈衝雷射沉積法製作 [Co(100) / Cu(100)]x /H-Si(100)多層膜磁性行為研究
No Thumbnail Available
Date
2015
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Abstract
我們成功地在室溫及攝氏350度下以脈衝雷射沉積法於氫鈍化矽(100)基板上磊出高品質的鈷(100)/銅(100)多層膜，其晶格結構與磁性特性分別由X光繞射儀與磁光柯爾效應儀、鐵磁共振儀所確認及分析。
藉由X光繞射頻譜可知，鈷能以面心立方結構穩定生長於 銅(100)/矽(100)之表面，樣品中銅、鈷兩者的繞射峰值分別位於50.34度及51.26度。其橫向磁光科爾效應圖亦顯示此批樣品有著面心立方結構所特有的磁四重對稱性，樣品之磁易軸及磁難軸分別坐落於鈷[100]、鈷[110]方向。
本次研究亦發現，於常溫下進行鈷(100)之磊晶則須提鍍膜能量密度至 4.25焦耳每平方公分，與高溫沉積之鈷(100)相比(飽和磁場1.5千厄斯特、矯頑場25厄斯特)，室溫成長之薄膜整體有著較低的飽和磁場(250厄斯特)及矯頑場(16厄斯特)。
We have successfully used Pulse Laser Deposition (PLD) method to produce high quality Cu(100)/Co(100) multilayer on hydrogen passivated Si(100) surface at room temperature and at 350 ℃. The crystalline structure was characterized by X-Ray diffraction, while its magnetic behaviors were examined by LMOKE and FMR. As confirmed by X-Ray diffraction, that FCC Co(100) can be stable on Cu(100)/H-Si(100), the diffraction peak of Co(100) and Cu(100) are located at 51.26° and 〖50.34〗^°, respectively. The FCC Co exhibs four fold symmetry with as revealed by LMOKE measurement. However, the RT growth lattice has coercivity and saturation field of 16 Oe and 250 Oe, respectively, which are less than that of the high temperature growth one (coercivity and saturation are 25 Oe, and 1.5 kOe, respectively).
We have successfully used Pulse Laser Deposition (PLD) method to produce high quality Cu(100)/Co(100) multilayer on hydrogen passivated Si(100) surface at room temperature and at 350 ℃. The crystalline structure was characterized by X-Ray diffraction, while its magnetic behaviors were examined by LMOKE and FMR. As confirmed by X-Ray diffraction, that FCC Co(100) can be stable on Cu(100)/H-Si(100), the diffraction peak of Co(100) and Cu(100) are located at 51.26° and 〖50.34〗^°, respectively. The FCC Co exhibs four fold symmetry with as revealed by LMOKE measurement. However, the RT growth lattice has coercivity and saturation field of 16 Oe and 250 Oe, respectively, which are less than that of the high temperature growth one (coercivity and saturation are 25 Oe, and 1.5 kOe, respectively).
Description
Keywords
脈衝雷射沉積法, 面心立方, 氫氣鈍化矽, 鈷(100)外延, 四重對稱, Pulse Laser Deposition, Face Centered Cubic, Hydrogen Passivation Si(100), Hydrogen Passivation Si(100), Four fold Symmetry