理學院

Permanent URI for this communityhttp://rportal.lib.ntnu.edu.tw/handle/20.500.12235/3

學院概況

理學院設有數學系、物理學系、化學系、生命科學系、地球科學系、資訊工程學系6個系(均含學士、碩士及博士課程),及科學教育研究所、環境教育研究所、光電科技研究所及海洋環境科技就所4個獨立研究所,另設有生物多樣性國際研究生博士學位學程。全學院專任教師約180人,陣容十分堅強,無論師資、學術長現、社會貢獻與影響力均居全國之首。

特色

理學院位在國立臺灣師範大學分部校區內,座落於臺北市公館,佔地約10公頃,是個小而美的校園,內含國際會議廳、圖書館、實驗室、天文臺等完善設施。

理學院創院已逾六十年,在此堅固基礎上,理學院不僅在基礎科學上有豐碩的表現,更在臺灣許多研究中獨占鰲頭,曾孕育出五位中研院院士。近年來,更致力於跨領域研究,並在應用科技上加強與業界合作,院內教師每年均取得多項專利,所開發之商品廣泛應用於醫、藥、化妝品、食品加工業、農業、環保、資訊、教育產業及日常生活中。

在科學教育研究上,臺灣師大理學院之排名更高居世界第一,此外更有獨步全臺的科學教育中心,該中心就中學科學課程、科學教與學等方面從事研究與推廣服務;是全國人力最充足,設備最完善,具有良好服務品質的中心。

在理學院紮實、多元的研究基礎下,學生可依其性向、興趣做出寬廣之選擇,無論對其未來進入學術研究領域、教育界或工業界工作,均是絕佳選擇。

Browse

Search Results

Now showing 1 - 6 of 6
  • Item
    Solution-Processable Pyrite FeS2 Nanocrystals for the Fabrication of Heterojunction Photodiodes with Visible to NIR Photodetection
    (Wiley-VCH Verlag, 2012-07-03) D.-Y. Wang; Y.-T. Jiang; C.-C. Lin; S.-S. Li; Y.T. Wang; Chia-Chun Chen; C.-W. Chen
    A heterojunction photodiode with NIR photoresponse using solution processable pyrite FeS2 nanocrystal ink is demonstrated which has the advantages of earth-abundance and non-toxicity. The device consists of a FeS2 nanocrystal (NC) thin film sandwiched with semiconducting metal oxides with a structure of ITO/ZnO/FeS2 NC/MoO3/Au, which exhibits an excellent photoresponse with a spectral response extended to NIR wavelengths of up to 1150 nm and a high photocurrent/dark current ratio of up to 8000 at -1 V under AM1.5 illumination (100 mW cm−2).
  • Item
    Enhanced Infrared Light Harvesting of Inorganic Nanocrystal Photovoltaic and Photodetector on Graphene Electrode
    (American Institute of Physics, 2011-06-27) C.-C. Lin; D.-Y. Wang; K.-H. Tu; Y.-T. Jiang; M.-H. Hsieh; Chia-Chun Chen; C.-W. Chen
    We demonstrate an enhancement of infrared light harvesting of inorganic PbSnanocrystalphotovoltaic and photodetectordevices based on the transparent grapheneelectrode. Due to high infrared transparency of the grapheneelectrode with respect to indium tin oxide (ITO), the infrared photoresponse of the graphene-based device is superior to the ITO-based counterpart, in spite of a higher sheet resistance of the grapheneelectrode. The outstanding infrared characteristics of the devices based on the grapheneelectrode make it a promising candidate for infrared optoelectronic applications such as solar cells, imaging and sensing, or optical communication.
  • Item
    Quantum Dot Light-Emitting Diode Using Solution-Processable Graphene Oxide as the Anode Interfacial Layer.
    (American Chemical Society, 2012-05-10) D.-Y. Wang; I.-S. Wang; I.-S. Huang; Y.-C. Yeh; S.-S. Li; K.-H. Tu; Chia-Chun Chen; C.-W. Chen
    In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.
  • Item
    Direct evidence of type II band alignment in nanoscale P3HT/CdSe heterostructures
    (IOP Publishing, 2011-02-11) C.-H. Wang; C.-W. Chen; Y.-T. Chen; C.-T. Chen; Y.-F.Chen; S.-W. Chou; Chia-Chun Chen
    Due to inherent advantages of both constituent materials, organic/inorganic hybrid composites have attracted increasing attention. One of the fundamental issues needed to be resolved is their band alignment, which governs most of the electrical and optical properties. Here, we report the investigation of optical transition in poly(3-hexylthiophene) (P3HT)/CdSe nano-composites (NCs). It is found that the relaxation dynamics of photo-carriers in NCs is dominated by charge separation effects. Based on the band bending effect and the quantum confinement energy of electrons in the conduction band of CdSe quantum dots, we provide direct evidence of type II band alignment in P3HT/CdSe NCs. The establishment of a type II transition in NCs is very useful for the future design of efficient optoelectronic devices based on conjugated polymer/semiconductor hybrid systems.
  • Item
    Extended Red Light Harvesting in a Poly(3-hexylthiophene)/Iron Disulfide Nanocrystal Hybrid Solar Cell
    (IOP Publishing, 2009-10-07) Y.-Y. Lin; D.-Y.Wang; H.-C. Yen; H.-L. Chen; Chia-Chun Chen; C.-M. Chen; C.-Y. Tang; C.-W. Chen
    A polymer solar cell based on poly(3-hexylthiophene) (P3HT)/iron disulfide (FeS2) nanocrystal (NC) hybrid is presented. The FeS2 NCs of 10 nm in diameter were homogeneously blended with P3HT to form an active layer of a solar cell. An extended red light harvesting up to 900 nm resulting from the NCs in the device has been demonstrated, compared to a typical absorption edge of 650 nm of a pristine P3HT. The environmentally friendly and low-cost FeS2 NCs can be used as a promising candidate for an acceptor in the polymer solar cell device application with an enhanced photovoltaic response in the extended red light region.
  • Item
    Sharp Infrared Emission from Single-Crystalline Indium Nitride Nanobelts Prepared Using Guided-Stream Thermal Chemical Vapor Deposition
    (Wiley-VCH Verlag, 2006-03-01) M.-S. Hu; W.-M. Wang; T.-T. Chen; L.-S. Hong; C.-W. Chen; Chia-Chun Chen; Y.-F. Chen; K.-H. Chen; L.-C. Chen
    Single-crystalline InN nanobelts have been synthesized using Au as the catalyst by a guided-stream thermal chemical vapor deposition technique. The resultant InN nanobelts typically have widths ranging from 20 to 200 nm, a width to thickness ratio of 2–10, and lengths of up to several tens of micrometers. Structural analysis shows that these InN nanobelts have a wurtzite structure and exhibit a rectangular cross section with self-selective facets, i.e., the nanobelts are enclosed only by ± (001) and ± (11?0) planes with [110] being the exclusive growth direction along their long axis. This facet selectivity can be understood by the differences in the surface energies of the different facets. Photoluminescence (PL) spectra of InN nanobelts show a sharp infrared emission peak at 0.76 eV with a full width at half maximum of 14 meV, narrower than the values reported for InN epilayers. The integrated PL intensity is found to increase linearly with the excitation power, which suggests that the observed PL can be attributed to direct band-to-band emission.