物理學系

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本系師資陣容堅強,現有教授15人、副教授12人、助理教授2人、名譽教授5人,每年國科會補助之專題研究計畫超過廿個,補助之經費每年約三千萬,研究成果耀眼,發表於國際著名期刊(SCI)的論文數每年約70篇。

近年來已在課程方面 著手變革,因應學子的各種不同的生涯規劃與需求,加強職業輔導與專業能力的提升,增加高科技相關課程,提供光電學程(光電半導體、半導體製程技術、近代光 學與光電科技等)、凝態物理、表面物理與奈米科技、高能與理論物理、生物物理、應用物理等研究發展專業人才,並配合博士逕讀辦法,讓大學部學生最快能在五 年內取的碩士(透過碩士班先修生),八年內取得博士,有助於提升本系基礎與應用研發能量,為各學術研究機構與業界高科技創新與研發人力(包括在光電業、半 導體製造業、電腦週邊產業等)。

本系亦推動網路教學(科學園)與數位科學研究,作為提供科學教學與學習系統平台的強化支援,並除了原先開設的教育學程外,多增強學生英語教學的能力,與世界科學教師系統連結,在教師從業方面,塑造世界級的物理科學教師,發揮教育影響力。

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    原子島在金屬/半導體介面的成長研究 (以鈷/銀/鍺(111)為例)
    (2012) 黃筱嵐; Xiao-Lan Huang
    The thermal reaction of Co on Ag/Ge(111)-(√3×√3)/(4×4) phases was studied by scanning tunneling microscopy, low energy electron diffraction, and Auger electron spectroscopy. Firstly, we address on the controversies over the chemical composition of Co islands by examining the thermal reaction of Co on "Ag/Ge(111)-" √3×√3 phase, as well as the coexisting Ag/Ge(111)-4×4 phase. From the study, one finds that Ag atoms shift from (4×4) phase to (√3×√3) phase because of the interaction between Co and the surface. The fact suggests that it is on the surface where Ag-less phase (4×4) transforms into Ag-richer phase (√3×√3). Secondly, we proof that (√13×√13) periodicity is composed of Co-Ge alloy, whereas (2×2) periodicity is composed of pure Co. Thirdly, we realize that it is "Ag/Ge(111)-" √3×√3 preventing Co from diffusing into substrate when annealing the surface at the temperature between 320 K and 730 K. It is known that Co"-" 2×2 islands grown on Ag/Ge(111)-√3×√3 surface are in hcp structure with a (11-20) orientation. The island evolution involves the shape transformation of a unit cell from parallelogram into rectangular. Meanwhile, the shape of the island shifts from hexagonal to stripe. In additions, it is identified that Co-2×2 islands grow along two crystallographic directions: pseudo-[0001] and pseudo-[1-100]. We observe a lateral shift between the topmost and the underlying bilayers for islands which grow along pseudo-[0001] direction. On the other hands, no lateral shift is perceived for those growing along pseudo-[1-100] direction. In terms of the strain–relaxation of Co-2×2 islands grown on Ag/Ge(111)-√3×√3 surface, we analyze the images taken by scanning tunneling microscopy. From the studies, one realizes a common fact that Co"-" 2×2 islands adopt a more compact arrangement than Ge(111) substrate does, whereas each Co-2×2 island is different in the degree of atomic compactness. Yet, we do not observe any distinct relationship between strain–relaxation and the island height. In addition, we identify three different groups of islands from analyzing the correspondence between the strain–relaxation and the island size: (i) small islands (less than 80 nm2) with fixed inter-row distances in high atomic compactness, (ii) small islands with unfixed inter-row distances, and (iii) big islands (bigger than 80 nm2) with fixed inter-row distances in less compact atomic arrangement, as compared to the first two groups. Based on the obtained information, we propose the model that explains the relationship between the strain–relaxation and the island size. Regarding electronic structure, we study "Ag/Ge(111)-" 4×4 phase, "Ag/Ge(111)-" √3×√3 phase, Co"-" 2×2 island, and "CoxGey-" √13×√13 island by means of scanning tunneling spectroscopy at room temperature. Similar to the one acquired from "Ge(111)-c" 2×8, the spectrum obtained from Ag/Ge(111)-4×4 structure reveals a shoulder at 0.7 V, which indicates that Ge adatoms were donated to the electronic states of the Ag-driven phase. However, the electronic spectrum taken from the "CoxGey-" √13×√13 island shows a large number of peaks, which indicates the complex bonding between "CoxGey-" √13×√13 island and the substrate. In addition, the spectra obtained from the Co-2×2 island grown on the step demonstrate a number of peaks at negative sample bias, which is different comparing to those taken from the Co-2×2 island located on the terrace. The phenomenon explains the various Co-substrate interactions, which are accompanied with the growth of Co islands at different areas of the stepped surface.