教師著作

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Subject: search.filters.subject.Electrochemical etching

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    整合光輔助電化學穿孔蝕刻與微電鑄技術應用於微金屬柱陣列之研製
    (2007-11-23) 楊啟榮; 李明承; 羅嘉佑; 張龍吟
    本研究將整合光輔助電化學蝕刻(ECE)與精密電鑄技術，以開發高密度金屬垂直結構陣列之製程技術。利用改變光照強度與電流密度等實驗條件，以電化學蝕刻達到矽晶圓高密度微穿孔的目的，再利用精密電鑄技術進行穿孔之金屬導體填充，如此可實現高密度金屬垂直結構陣列。未來可應用於積體化探針陣列之製作，或利用晶圓內垂直導體而實現晶圓級堆疊封裝之目的。此技術開發有設備與製程成本低、可積體化生產、與半導體製程相容性高、批次生產與良率高等特點。 基於上述，本研究利用自行開發之低成本電化學蝕刻(ECE)設備，順利測得相關製程之最佳參數。由實驗結果已驗證，在利用電化學蝕刻技術製作高深寬比微孔洞陣列方面，當蝕刻時間達到31.5小時，可得高深寬比之穿孔結構。所用之晶片為n-type <100>，其蝕刻液為2.5 wt.%之氫氟酸溶液，陽極放置矽晶片，陰極為白金電極，獲得之穿孔其線寬為40 μm，深寬比約為12.5，證明利用此技術已能局部取代乾式蝕刻之應用領域。在金屬柱電鑄方面，利用正負脈衝電流，使金屬柱陣列能順利成形，其金屬柱高度約500 μm，深寬比約為12.5。
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    Fabrication of micro free standing structure in p-type silicon using an electrochemical etching technique
    (2005-11-25) 楊啟榮; 林明憲; 湯杜翔; 鍾武雄; Yang; Chii-Rong; Lin; Ming-Hsien; Tang; Du-Hsiang; Chung; Wu-Hsung
    An electrochemical etching technique is suitable to the application of MEMS silicon bulk micromachining. In this work, a HF-ethanol-H2O based electrolyte, modified by adding anionic surfactant MA, was used to evaluate the etching properties of p-type silicon in electrochemical etching. The high-aspect-ratio trench structures and free-standing beams were also fabricated with only single step mask. The results indicate that the pattern of initial pits significantly affects the etching rate of the macropores and the morphology of the etched trench structures. The surfactant MA can drastically reduce the roughness and significantly affect the topology of the etched surface. Because the contact angle of HF-ethanol-H2O-MA based electrolyte is about 6.4 times lower than that in HF-ethanol-H2O based electrolyte. However, the etching rate in MA-added electrolyte is lower than that obtained in electrolyte without MA. Moreover, the wall width of trenches is kept on about 2μm independently of the current density and the width of etching mask. Furthermore, the etched depth is proportional to etching time, but the etching rate is inverse proportional to the etching time. Because the etched depth grows deeper, the concentration of electrolyte at the pore tip decreases linearly with length. The trench structures with aspect ratio of around 40 have been obtained in this study. The free-standing beams are also fabricated with only one mask by controlling the current density.