教師著作
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Item 新型高深寬比奈米柱狀陣列製作技術(2006-11-24) 程金保; 楊啟榮; 湯杜翔; 曾柏翔; 吳俊緯Item 奈米柱應用於燃料電池電極之技術開發(2006-11-30) 楊啟榮; 程金保; 湯杜翔; 曾柏翔; 林宏展Item Fabrication of micro free standing structure in p-type silicon using an electrochemical etching technique(2005-11-25) 楊啟榮; 林明憲; 湯杜翔; 鍾武雄; Yang; Chii-Rong; Lin; Ming-Hsien; Tang; Du-Hsiang; Chung; Wu-HsungAn electrochemical etching technique is suitable to the application of MEMS silicon bulk micromachining. In this work, a HF-ethanol-H2O based electrolyte, modified by adding anionic surfactant MA, was used to evaluate the etching properties of p-type silicon in electrochemical etching. The high-aspect-ratio trench structures and free-standing beams were also fabricated with only single step mask. The results indicate that the pattern of initial pits significantly affects the etching rate of the macropores and the morphology of the etched trench structures. The surfactant MA can drastically reduce the roughness and significantly affect the topology of the etched surface. Because the contact angle of HF-ethanol-H2O-MA based electrolyte is about 6.4 times lower than that in HF-ethanol-H2O based electrolyte. However, the etching rate in MA-added electrolyte is lower than that obtained in electrolyte without MA. Moreover, the wall width of trenches is kept on about 2μm independently of the current density and the width of etching mask. Furthermore, the etched depth is proportional to etching time, but the etching rate is inverse proportional to the etching time. Because the etched depth grows deeper, the concentration of electrolyte at the pore tip decreases linearly with length. The trench structures with aspect ratio of around 40 have been obtained in this study. The free-standing beams are also fabricated with only one mask by controlling the current density.Item 新型微機械式可變電容之設計與製作(2005-11-25) 程金保; 楊啟榮; 黃信瑀; 劉榮德; 湯杜翔Item 整合奈米球微影及光輔助電化學蝕刻之高深寬比奈米柱狀陣列製作技術(2005-11-10) 楊啟榮; 黃茂榕; 湯杜翔; 劉榮德Item 新型高深寬比奈米孔洞陣列製作技術(2005-11-25) 楊啟榮; 黃茂榕; 湯杜翔; 劉榮德本研究結合奈米球微影以及光輔助電化學蝕刻兩項技術之優點，用於製作高深寬比的奈米孔洞陣列。實驗的結果証實利用旋轉塗佈搭配震盪塗佈的方式，可將奈米球規則地排列於矽基板上，並且定義出單層與雙層奈米等級的圖案。而在光輔助電化學蝕刻的實驗中，証實了在添加界面活性劑的作用下，蝕刻液的接觸角可降低至 15度，具有超親水性的特性，並大幅改善擴孔現像，使得奈米級的高深寬比孔洞能夠輕易的產生。當使用1 V的蝕刻電壓與HF 濃度2.5wt%的蝕刻液，經過12.5分鐘的蝕刻後，能夠產生高度6.2μm，直徑為90nm 的高深寬比之奈米級孔洞，而孔洞的深寬比約為68:1。Item 新型高深寬比奈米柱狀陣列製作技術(2006-11-24) 程金保; 楊啟榮; 湯杜翔; 曾柏翔; 吳俊緯Item 奈米柱應用於燃料電池電極之技術開發(2006-11-30) 楊啟榮; 程金保; 湯杜翔; 曾柏翔; 林宏展Item 新型微機械式可變電容之設計與製作(2005-11-25) 程金保; 楊啟榮; 黃信瑀; 劉榮德; 湯杜翔