A V-band VCO using fT-doubling technique in 0.18-μm CMOS
| dc.contributor | 國立臺灣師範大學應用電子科技學系 | zh_tw |
| dc.contributor.author | Yen-Hung Kuo | en_US |
| dc.contributor.author | Jeng-Han Tsai | en_US |
| dc.contributor.author | Tian-Wei Huang | en_US |
| dc.contributor.author | Huei Wang | en_US |
| dc.date.accessioned | 2014-10-30T09:28:45Z | |
| dc.date.available | 2014-10-30T09:28:45Z | |
| dc.date.issued | 2011-12-08 | zh_TW |
| dc.description.abstract | A low supply voltage V-band voltage-controlled oscillator (VCO) using fT-doubling technique is presented in this paper. The proposed VCO is fabricated in 0.18-μm CMOS technology. The proposed VCO adopts the fT-doubling technique to eliminate the gate-to-source capacitance of cross-coupled pair of VCO. The oscillation frequency of VCO can be increased due to the parasitic capacitance is eliminated. The measured results show that the proposed VCO have tuning range of 0.74 GHz from 58.09-to-58.83 GHz. The proposed VCO consumes 4 mW dc power from 1.2 V supply voltage. | en_US |
| dc.description.uri | http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=06173733 | zh_TW |
| dc.identifier | ntnulib_tp_E0611_02_001 | zh_TW |
| dc.identifier.uri | http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32260 | |
| dc.language | en | zh_TW |
| dc.relation | Asia-Pacific Microwave Conference,Melbourne, VIC,pp251-254(EI, NSC 100-2219-E-002-007, NSC 100-2219-E-002-005, NSC 100-2219-E-002-011, NSC 100-2221-E-003-027). | en_US |
| dc.subject.other | CMOS | en_US |
| dc.subject.other | f T -doubler | en_US |
| dc.subject.other | VCO | en_US |
| dc.title | A V-band VCO using fT-doubling technique in 0.18-μm CMOS | en_US |