A V-band VCO using fT-doubling technique in 0.18-μm CMOS

Yen-Hung Kuo; Jeng-Han Tsai; Tian-Wei Huang; Huei Wang

A V-band VCO using fT-doubling technique in 0.18-μm CMOS

Date

2011-12-08

Authors

Yen-Hung Kuo

Jeng-Han Tsai

Tian-Wei Huang

Huei Wang

Abstract

A low supply voltage V-band voltage-controlled oscillator (VCO) using fT-doubling technique is presented in this paper. The proposed VCO is fabricated in 0.18-μm CMOS technology. The proposed VCO adopts the fT-doubling technique to eliminate the gate-to-source capacitance of cross-coupled pair of VCO. The oscillation frequency of VCO can be increased due to the parasitic capacitance is eliminated. The measured results show that the proposed VCO have tuning range of 0.74 GHz from 58.09-to-58.83 GHz. The proposed VCO consumes 4 mW dc power from 1.2 V supply voltage.