High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers

Lee, Ya-JuYao, Yung-ChiHuang, Chun-YingLin, Tai-YuanCheng, Li-LienLiu, Ching-YunWang, Mei-TanHwang, Jung-Min2016-01-212016-01-212014-08-27Nanoscale Research Letters. 2014 Aug 27;9(1):433http://dx.doi.org/10.1186/1556-276X-9-433http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/76829Abstract In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layersJournal Article2016-01-21enLee et al.; licensee Springer.