胡淑芬Shu-Fen Hu尼科洛Gabriel Nicolo A. De Guzman2020-10-19不公開2020-10-192020http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060641045S%22.&%22.id.&http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/111383noneNear-infrared (NIR) phosphors are fascinating materials that have numerous applications in diverse fields. In this study, a series of La3Ga5GeO14:Cr3+ phosphors, which was incorporated with Sn4+, Ba2+, and Sc3+, was successfully synthesized using solid-state reaction to explore every cationic site comprehensively. The crystal structures were well resolved by combining synchrotron X-ray diffraction and neutron powder diffraction through joint Rietveld refinements. Trapping of free electrons induced by charge unbalances and lattice vacancies changes the magnetic properties, which was well explained by a Dyson curve in electron paramagnetic resonance. Temperature and pressure-dependent photoluminescence spectra reveal various luminescent properties between strong and weak fields in different dopant centers. The highest acquired quantum yield showed to be 23% which was enhanced by the Sc3+ doping. The phosphor-converted NIR light-emitting diode (pc-NIR LED) package demonstrates a superior broadband emission that covers the near-infrared (NIR) region of 650–1050 nm with a radiant power output reaching 23.8 mW at an injection current of 350 mA. This study can provide researchers with new insight into the control mechanism of multiple-cation-site phosphors and reveal a potential phosphor candidate for practical NIR LED application.nonePhosphorNear-InfraredLight-Emitting DiodesBroadband EmissionCation ControlMulti-Site Substitution應用於發光二極體之超寬帶近紅外光螢光粉調控Multi-Site Cation Control of Ultra-Broadband Near-Infrared Phosphors for Applications in Light Emitting Diodes