李敏鴻鍾朝安Lee, Min-HungJong, Chao-An黃紹嘉HUANG, Shao-Jia2019-09-04不公開2019-09-042016http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060348031S%22.&%22.id.&http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/97999近幾年，過渡金屬硫屬化合物因為具有能隙關係，比同樣具有二維結構的石墨烯更適合用在電晶體元件製作，因此吸引很研究學者的興趣。其中WSe2是屬於P型的半導體更特別引人關注，然而一直缺乏一個穩定可控制的摻雜技術，難度頗高。本篇將開發一個穩定可行的摻雜製程，利用共濺鍍製程技術加上後硒化處理。希望用這個方法能夠讓電晶體的載子濃度及載子遷移率提升，讓通道電阻及接觸電阻有效的降低。Recently, two dimensional transition metal dichalcogenides (TMDs) compounds have drawn much interest due to their potential in TFT channel application than Graphene which without bandgap. Among these 2D materials, p-type WSe2 is particularly attractive. However, precise doping of WSe2 is difficult due to the absence of a controllable doping technique. In this paper, a controllable WSe2 doping method by co-sputtering process followed by post selenization treatment is demonstrated. Using this technique, high acceptor doping concentration and good hole mobility were obtained. Low sheet resistance and contact resistance were obtained.二硫化硒二硒化鎢二硫化鉬接觸電阻硒化MoS2WS2WSe2Contact ResistanceSelenization