國立臺灣師範大學化學系D.-Y. WangI.-S. WangI.-S. HuangY.-C. YehS.-S. LiK.-H. TuChia-Chun ChenC.-W. Chen2014-12-022014-12-022012-05-101932-7447http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42365In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.