國立臺灣師範大學應用電子科技學系Yen-Hung KuoJeng-Han TsaiTian-Wei Huang2014-10-302014-10-302010-09-30http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32267A K-band low-power and wideband injection-locked frequency divider (ILFD) using 0.18-μm CMOS technology is presented in this paper. To achieve the wide-locking-range and low-power consumption, the inductive peaking and current-reused techniques are adopted. The measurement results show that the proposed ILFD has a locking range of 5.5 GHz (23.6%), from 20.5 to 26 GHz, at the incident power of 0 dBm, with a very low power consumption of 1.5 mW. Among 180 nm and 130 nm CMOS frequency dividers, the proposed ILFD achieves wide locking range with the lowest dc power and RF injected power at K-band.