A miniature Q-band low noise amplifier using 0.13-m CMOS technology

國立臺灣師範大學應用電子科技學系Jeng-Han TsaiWei-Chien ChenTo-Po WangTian-Wei HuangHuei Wang2014-10-302014-10-302006-06-011531-1309�http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32258A miniature Q-band low noise amplifier (LNA) using 0.13-μm standard mixed signal/radio frequency complementary metal-oxide-semiconductor (CMOS) technology is presented in this letter. This three-stage common source thin-film microstrip LNA achieves a peak gain of 20dB at 43GHz with a compact chip size of 0.525mm2. The 3-dB frequency bandwidth ranges from 34 to 44GHz and the minimum noise figure is 6.3dB at 41GHz. The LNA outperforms all the reported commercial standard CMOS Q-band LNAs, with the highest gain, highest output IP3, and smallest chip size.Complementary metal-oxide-semiconductor (CMOS)low noise ampliﬁer (LNA)millimeter-wave (MMW)thin-ﬁlm microstrip (TFMS).A miniature Q-band low noise amplifier using 0.13-m CMOS technology