國立臺灣師範大學應用電子科技學系Jeng-Han TsaiYi-Jhang LinHao-Chun Yu2014-10-302014-10-302012-01-010895-2477http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32238In this letter, a low-voltage and low-power 3.5-GHz low noise amplifier (LNA) is designed and fabricated using TSMC 0.18-lm MS/RF complementary metal-oxide-semiconductor field effect transistor (CMOS) technology. The complementary current-reused topology is utilized to achieve low dc power consumption while maintaining reasonable gain performance. Consuming 1.38 mW dc power from 0.6 V supply, the LNA achieves a small signal gain of 16.09 dB and a noise figure of 4.702 dB at 3.5 GHz. Compared with previously reported LNA, the MMIC has excellent FOM performance. VC 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:145–147, 2012; View this article online at wileyonlinelibrary.comCMOSRF frontendslow noise amplifierlow-voltagelow-power