國立臺灣師範大學化學系C.-K. KuoC.-W. HsuC.-T. WuZ.-H. LanC.-Y. MouY.-J. YangChia-Chun ChenK.-H. Chen2014-12-022014-12-022006-06-140957-4484http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42324We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.