On-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity

國立臺灣師範大學化學系R.-S. ChenS.-W. WangZ.-H. LanJ. T.-H. TsaiC.-T. WuL.-C. ChenK.-H. ChenY.-S. HuangChia-Chun Chen2014-12-022014-12-022008-07-011613-6810http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42337Building nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivitygallium nitridenanobridgesnanowiresphotoconductivityresponsivityOn-chip Fabrication of Well-aligned and Contact-barrier-free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity