國立臺灣師範大學應用電子科技學系Jeng-Han TsaiYi-Lin LeeTian-Wei HuangCheng-Ming YuJohn G. J. Chern2014-10-302014-10-302007-06-08http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32279This paper presents a Q-band balanced medium power amplifier fabricated using standard 90-nm 1P9M CMOS technology. The balanced amplifier, which is constructed with two broadband amplifiers and two broadside couplers using thin-film microstrip (TFMS) line technique, has a compact chip size of 0.78 x 0.92 mm2. The MMIC demonstrates a measured gain of 14.5 dB at 48 GHz. With the feature of the balanced amplifier, the MMIC has a 3-dB bandwidth up to 37.2 % from 35 to 51 GHz with flat gain and return loss frequency response. Furthermore, the balanced amplifier delivers a saturation output power of 10.6 dBm with 8% PAE and OPldB is 7.5 dBm.millimeter-wave (MMW)Q-bandCMOSbalanced amplifierthin-film microstrip (TFMS)broad-side coupler.