李亞儒Lee, Ya-Ju李懿泓Li, Yi-Hong2019-09-04不公開2019-09-042018http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22G060548040S%22.&%22.id.&http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/98042本文的研究主體：全無機CsPbX3(X = Br，I，Cl )之鈣鈦礦材料於發光二極體之發光層與元件結構之應用。針對無機鈣鈦礦薄膜材料的製程並使其發光。除此之外，使用常溫法合成無機鈣鈦礦，並縮短其製成時間。採用X光繞射儀(XRD)、電子顯微鏡(SEM)、光激發螢光光譜(PL)鑑定鈣鈦礦材料特性，進一步應用至本文多層鈣鈦礦發光元件的結構。 藉由調控鈣鈦礦陰離子的比例，發出不同波長的光，使用Ocean Optics USB4000光譜儀量測樣品電致發光光的波段，並設計鈣鈦礦電化學發光元件(LEC)與電阻式記憶體(RRAM)的結合。In this study,we use hot-injection method and Room-Temperature Synthesis. The characteristics of perovskite materials were identified by X-ray diffraction (XRD), electron microscopy (SEM) and photoluminescence (PL), and further applied to the structure of multilayer perovskite light-emitting diodes. Emites different wavelengths by regulating the proportion of perovskite anions.And Integrated LEC and RRAM.鈣鈦礦發光二極體熱注入發光電化學電阻式記憶體常溫合成Perovskitehot injectionLight Emitting Diodes(LEDs)Light-emitting electrochemical cell(LEC)Resistive random-access memory(RRAM)Room-Temperature Synthesis