國立臺灣師範大學應用電子科技學系Huei WangKun-You LinZuo-Min TsaiLiang-Hung LuHsin-Chia LuChi-Hsueh WangJeng-Han TsaiTian-Wei HuangYi-Cheng Lin2014-10-302014-10-302009-02-011527-3342�http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32248On the basis of the current status of silicon based MMICs, it is possible to implement millimeter-wave SOC in silicon-based technologies that include the antenna, a medium-power amplifier, a transceiver, an LO (frequency synthesizer), and baseband circuits in a single chip. With certain interconnection schemes, such as flip-chip, to connect the chip to the substrate, it is also possible to integrate the best possible chips for a millimeter-wave communication system. Currently, CMOS is the best choice for the baseband circuits, while GaAs and InP MMICs can provide the best noise/power performance in the transceiver. High-efficiency antennas can be implemented directly on the packaging substrate. The SIP approach has the optimal combinations of the components for the best performance in a particular system. For example, a system in a package including CMOS baseband circuits, GaAs/InP-based transceiver, high-efficiency antenna, and high-power amplifier can achieve the best system characteristics. As we have discussed, the scope of SOC can be expanded along with more advanced MMIC fabrication technology and design techniques.MMICs in the millimeter-wave regime