蘇賢錫2014-10-272014-10-271984-06-??http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/17213A one-electron theory of non-equilibrium trap occupancy in amorphous semiconductors has been proposed, resulting in simple expressions for electrons in states above the equilibrium Fermi level. The state density is then obtained by transient photoconductivity analysis.半導體非晶能隙狀態密度