國立臺灣師範大學化學系C.-W. LinD.-Y. WangY. TaiY.-T. JiangM.-C. ChenChia-Chun ChenY.-J. YangY.-F. Chen2014-12-022014-12-022011-07-270022-3727http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42361Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.