A W-band medium power amplifier in 90 nm CMOS

國立臺灣師範大學應用電子科技學系Yu-Sian JiangJeng-Han TsaiHuei Wang2014-10-302014-10-302008-12-011531-1309�http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32250A W-band CMOS medium power amplifier (PA) is presented in this letter. The circuit is implemented in 90 nm mixed signal/radio frequency CMOS process. By utilizing balanced architecture, the PA demonstrated a measured maximum small signal gain of 17 dB with 3 dB bandwidth from 91 to 108 GHz. The saturation output power (P sat) is 12 dBm between 90 and 100 GHz for V ds of each transistor at 1.5 V. To our knowledge, this is the highest frequency CMOS PA to date.CMOSmicrowave monolithic integrated circuit (MMIC)power ampliﬁer (PA)W-band.A W-band medium power amplifier in 90 nm CMOS