國立臺灣師範大學化學系H.-M. LinY.-L. ChenJ. YangY.-C. LiuK.-M. YinJ.-J. KaiF.-R. ChenL.-C. ChenY.-F. ChenChia-Chun Chen2014-12-022014-12-022003-04-091530-6984http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42302A convenient thermal CVD route to core−shell GaP@GaN and GaN@GaP nanowires is developed. The structural analyses indicate that the nanowires exhibit a two-layer and wirelike structure. High-resolution transmission electron microscopy (HRTEM) images reveal misfit dislocation loops at the interface of the nanowires. Unusual temperature dependences of the photoluminescence (PL) intensity of GaP@GaN nanowires are observed, and they are interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. In the Raman spectra of GaN@GaP nanowires, an unexpected peak at 386 cm-1 is found and assigned to a surface phonon mode.