國立臺灣師範大學化學系L.-C. LiS.-Y. HuangJ.-A. WeiY.-W. SuenM.-W. LeeW.-H. HsiehT.-W. LiuChia-Chun Chen2014-12-022014-12-022009-02-011533-4880http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42339We report an experimental study on the correlation spectrums between different sections of a multi-contact GaN nanowire device. Our results indicate that there exists a negative correlation between the voltage fluctuations of adjacent sections of the nanowire separated by a metal contact in the transition region between the low-frequency 1/f noise and the high-frequency white thermal noise. We suggest that this correlation is caused by the voltage fluctuation under the contact area.CORRELATIONCROSS SPECTRUMELECTRIC FLUCTUATIONGAN NANOWIRELOW-FREQUENCY EXCESS NOISENOISE