國立臺灣師範大學化學系H.-L. LiuChia-Chun ChenC.-T. ChiaC.-C. YehC.-H. ChenM.-Y. YuS. KellerS. P. DenBaars2014-12-022014-12-022001-09-140009-2614http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42291Infrared and Raman-scattering studies of high-purity and -quality GaN nanowires are presented. The nanosize dependences of the peak shift and the broadening of the four first-order Raman modes agree with those calculated on the basis of the phonon confinement model. Additionally, the appearance of one Raman mode at ∼View the MathML source is attributed to zone-boundary phonon activated by surface disorders and finite-size effects. Moreover, the Raman-scattering intensities of certain phonons show a different resonantly enhanced behavior, which can be used to verify the information on the electronic structures and the electron–phonon interaction in GaN nanowires.