李敏鴻M.H.LEE陳品光2019-09-04不公開2019-09-042013http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22GN0699480259%22.&%22.id.&http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/98287近年來地球暖化造成氣候變遷，使得節能方面的議題備受重視，Hybrid複合式電動車被視為減緩石油消耗提升能源使用效率的產品，然而在高電壓的驅動下，傳統的電晶體已無法滿足這類的需求，發展高電壓及高轉換效率的電晶體近年來相當熱門。 由於氮化鎵材料耐高溫及耐腐蝕特性且電性方面氮化鎵的高電子遷移率(~1500 cm2/V-s) ，3.4 eV的寬能隙(wide bandgap)、5 MV/cm的高崩潰電壓(high breakdown voltage)等優良特性，近年來被廣泛應用在高功率元件(High Power Device)被視為取代傳統矽基IGBT。 我們提出四元結構(In、Al、Ga、N)阻障層，調整能障高度，成功製作出增強型金氧半氮化鎵電晶體得到臨界電壓(threshold voltage) Vth=0.65V為通道常關(normally-off)的操作，飽和電流約40 mA/mm操作在VGS=4V 且 VDS=10V時，元件線寬為LG=15m且 LGD=20m。此外，在已完成的氮化鎵電晶體整合負電容材料改善次臨界擺幅、轉導(transconductance)與通道電導(channel conductance)，並利用AFM (Atomic Force Microscope)、XRD、RSM(Reciprocal space mapping)及TEM(Transmission Electron Microscopy)等進行材料分析。In recent years, global warming caused by climate change, making the issue of energy efficiency has attracted increasing attention, Hybrid hybrid electric vehicle is deemed to slow oil consumption increase energy efficiency of products, but in the high-voltage driver, the traditional transistors have been unable to to meet such needs, the development of high voltage and high conversion efficiency of transistors very popular in recent years. Owing to GaN high temperature and corrosion resistant materials and electrical properties, GaN high electron mobility (~ 1500 cm2/Vs), 3.4 eV wide bandgap (wide bandgap), 5 MV / cm high breakdown voltage (high breakdown voltage) and other fine features, in recent years, is widely used in High Power Device. GaN-based power devices have been expected to replace conventional Si-based IGBT (Insulated Gate Bipolar Transistor). We propose four quaternary structures (In, Al, Ga, N) barrier layer, adjust the barrier height, The quaternary InAlGaN-barrier GaN MOS-HEMT with enhancement-mode operation was demonstrated. The MOS-HEMT with LG=15m and LGD=20m has Vth=0.65V and maximum drain current 40 mA/mm at VDS=10V. In addition, integrate negative capacitance material with GaN transistors improvement subthreshold swing, transconductance and channel conductance, and using AFM (Atomic Force Microscope), XRD, RSM (Reciprocal space mapping ) and TEM (Transmission Electron Microscopy), etc. material Analysis.氮化鎵負電容增強型GaNnegative capacitorEnhancement-mode