國立臺灣師範大學化學系Chia-Chun ChenChun-Chia Yeh2014-12-022014-12-022000-05-011521-4095http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42285GaN nanowires for high-efficiency optoelectronic devices? The simple method for the large-scale production of GaN nanowires presented here may bring us one step closer. Gallium and ammonia are reacted, using polycrystalline indium powder as a catalyst, to produce wire-like structures (see Figure) that show strong photoluminescence of the nanowires in the UV region.GalliumGallium nitrideIndiumNanowiresgallium nitride