A 86- to 108-GHz Amplifier in 90-nm CMOS

國立臺灣師範大學應用電子科技學系Yu-Sian JiangZuo-Min TsaiJeng-Han TsaiHsien-Te ChenHuei Wang2014-10-302014-10-302008-02-011531-1309http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32253This letter presents a CMOS ampliﬁer with 22 GHz 3-dB bandwidth ranging from 86 to 108 GHz. The ampliﬁer is implemented in 90 nm mixed signal/radio frequency (RF) CMOS process using three-stage cascode RF NMOS conﬁguration. It achieves a peak gain of 17.4 dB at 91 GHz from the measured results. To our knowledge, this is the highest frequency CMOS ampliﬁer reported to date.AmpliﬁerCMOSmonolithic microwave integrated circuit (MMIC).A 86- to 108-GHz Amplifier in 90-nm CMOS