國立臺灣師範大學化學系S. DharaA DattaC.-T. WuZ.-H. LanK.-H. ChenY. -L. WangY.-F. ChenC.-W. HsuL.-C. ChenH.-M. LinChia-Chun Chen2014-12-022014-12-022004-05-030003-6951http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/42311Optical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally dopedn-GaNnanowires. A 50 keV Ga+focused ion beam in the fluence range of 1×1014–2×1016 ions cm−2 is used for the irradiation process. A blueshift is observed for the yellow luminescence (YL) band with increasing fluence. Donor–acceptor pair model with emission involving shallow donor introduced by point-defect clusters related to nitrogen vacancies and probable deep acceptor created by gallium interstitial clusters is responsible for the shift. High-temperature annealing in nitrogen ambient restores the peak position of YL band by removing nitrogen vacancies.