A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology

國立臺灣師範大學應用電子科技學系Jeng-Han TsaiPei-Si WuChin-Shen LinTian-Wei HuangJohn G.J. ChernWen-Chu HuangHuei Wang2014-10-302014-10-302007-04-011531-1309�http://rportal.lib.ntnu.edu.tw/handle/20.500.12235/32256A compact and broadband 25-75-GHz fully integrated double-balance Gilbert-cell mixer using 90-nm standard mixed-signal/radio frequency (RF) CMOS technology is presented in this letter. A broadband matching network, LC ladder, for Gilbert-cell mixer transconductance stage design is introduced to achieve the flatness of conversion gain and good RF port impedance match over broad bandwidth. This Gilbert-cell mixer exhibits 3plusmn2dB measured conversion gain (to 50-Omega load) from 25 to 75GHz with a compact chip size of 0.30mm2. The OP1 dB of the mixer is 1dBm and -4dBm at 40 and 60GHz, respectively. To the best of our knowledge, this monolithic microwave integrated circuit is the highest frequency CMOS Gilbert-cell mixer to dateCMOSGilbert-cellmillimeter-wave (MMW)mixermonolithic microwave integrated circuit (MMIC).A 25-75-GHz broadband Gilbert-cell mixer using 90-nm CMOS technology