駱芳鈺Fang-Yuh Lo莊桓嘉Chuang Huan-Chia2019-09-052014-7-242019-09-052014http://etds.lib.ntnu.edu.tw/cgi-bin/gs32/gsweb.cgi?o=dstdcdr&s=id=%22GN060041005S%22.&%22.id.&http://rportal.lib.ntnu.edu.tw:80/handle/20.500.12235/102552本論文以脈衝雷射蒸鍍法於c平面藍寶石基板上先沉積一層氧化鋅緩衝層，再鍍上一層氧化鈥鋅薄膜，探討緩衝層在不同溫度、厚度下對氧化鈥鋅薄膜的影響。 以X光繞射檢測結果顯示我們的氧化鈥鋅薄膜為c軸取向，沒有發現任何其他結晶相。且在參雜高濃度鈥元素時引入氧化鋅緩衝層有助於氧化鈥鋅薄膜品質的提升。以PL檢測結果主要的缺陷發光有鋅空缺和鋅間隙，且隨著樣品檢測溫度的降低薄膜發光有增強的趨勢。SQUID檢測結果顯示氧化鈥鋅薄膜在室溫和T=5K時皆為順磁性。Pulsed-laser deposition (PLD) was applied to grow holmium-doped ZnO(Ho:ZnO) thin films on c-sapphire substrate with different holmium(Ho) concentrations and with ZnO buffer layer. The nominal doping density of Ho ranges from 3％－15％. The physical properties of Ho:ZnO thin films were investigatedby x-ray diffraction (XRD), photoluminescence(PL), and superconducting quantum interference device (SQUID). The XRD patterns show that there is no secondary phase. Photoluminesence spectroscopy showed the major defects are zinc vacancy and interstitial zinc. The m-H curves show paramagnetism of the thin films.脈衝雷射蒸鍍法稀磁性半導體鈥順磁性pulsed-laser depositiondiluted magnetic semiconductorHoparamagnetism